Research and Development
Discover Our R&D Projects
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Our R&D Department is working on several projects in the field of IT, physics and chemistry
- Available
SiC (Silicon Carbide) is used in high-temperature/high voltage semiconductor electronics. Our silicon carbide wafers can be used as a substrate for optoelectronics, solar inventers, power-factor connection and in other applications                                                                                                                                                                               Â
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- Available
Bulk crystals of SixGe1-x solid solutions are promising candidates for a variety of microelectronic and optoelectronic. SixGe1-x single crystals for microelectronic and optoelectronic device applications have generally been prepared in the form of thin films grown on a silicon substrate by various epitaxial growth techniques. Bulk monocrystalline SixGe1-x alloy also has expected application as a photo-detector, a thermo-generator, an x-ray and neutron monochromator, etc.In order to achieve high quality SixGe1-x crystals with different germanium contents, a variety of melt crystal growth techniques, such as Czochralski, Bridgman are used..Â
- Available
Hg1-xCdxTe (mercury cadmium telluride) is narrow direct bandgap alloy with a tunable bandgap spanning the shortwave infrared to the very long wave infrared regions.HgCdTe is the only common material that can detect infrared radiation in both of the accessible atmospheric windows. These are from 3 to 5 µm (the mid-wave infrared window, abbreviated MWIR) and from 8 to 12 µm (the long-wave window, LWIR).HgCdTe is a common material in photodetectors of Fourier transform infrared spectrometers.
